Polymer diffusants in III-V semiconductor compounds technology

A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N_Zn<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO₂ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al _xGa_1-xAs gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions