Traps and the kink effect in AlSb/InAs HEMTs

Author

Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Goldenberg, M.

Author_Institution

SFA Inc., Landover, MD, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

458

Lastpage

461

Abstract

The characteristics of AlSb/InAs/GaAs HEMTs with and without a kink in the output characteristics are compared. By measuring the output resistance dispersion in the frequency range from 10 Hz to 100 KHz the relationship to trapping phenomena were studied. Significant differences in kink behavior were found between material grown in different MBE systems. The light sensitivity and gate length effects were also examined. It appears that devices without kink have an additional trapping level in the AlSb which partially compensates the original mechanism causing the kink

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; high electron mobility transistors; high-frequency effects; hole traps; indium compounds; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 10 Hz to 100 kHz; AlSb-InAs; HEMTs; III-V semiconductors; MBE systems; gate length effects; hole traps; kink effect; light sensitivity; mm-wave FETs; output characteristics; output resistance dispersion; trapping phenomena; Charge carrier density; Electron mobility; Fabrication; Frequency; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Sheet materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492281

Filename

492281