DocumentCode
296350
Title
Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy
Author
LaPierre, R.R. ; Robinson, B.J. ; Thompson, D.A.
Author_Institution
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fYear
1996
fDate
21-25 Apr 1996
Firstpage
517
Lastpage
520
Abstract
In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; (100) InP substrates; ECR plasma-assisted epitaxy; InGaAsP; InP; LCM; QW; lateral composition modulation; optical properties; photoluminescence; plasma-assisted epitaxy; single quantum wells; structural properties; thick InGaAsP layers; Distributed feedback devices; Epitaxial growth; Indium phosphide; Material properties; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492297
Filename
492297
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