DocumentCode :
296353
Title :
High quality InGaAsP/InP multiple quantum well modulator structures for 1.3 and 1.5 μm applications
Author :
Mendonça, C. A C ; Chiu, T.H.
Author_Institution :
Inst. de Fisica Gleb Wataghin, Univ. Estadual de Campinas, Sao Paulo, Brazil
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
549
Lastpage :
552
Abstract :
We report on high quality InGaAsP/InP multiple quantum well structures grown by chemical beam epitaxy with absorption at the 1.3 to 1.5 μm range. Transmission profiles with remarkable excitonic features and sharply defined absorption edges for p-i-n samples with as many as 200 periods are shown to be achievable. Very sharp satellite peaks with linewidth comparable with that from the substrate are shown in the X-ray diffraction. We use a new method to monitor the substrate temperature which shows excellent results in terms of homogeneity of layer thickness and composition even for structures with a large number of periods
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; electro-optical modulation; excitons; gallium arsenide; gallium compounds; indium compounds; light absorption; light transmission; photoluminescence; semiconductor quantum wells; 1.3 to 1.5 mum; InGaAsP-InP; InGaAsP/InP multiple quantum well modulator structures; X-ray diffraction; absorption edges; chemical beam epitaxy; composition; electroabsorption modulators; excitonic features; layer thickness; linewidth; p-i-n samples; satellite peaks; substrate temperature; transmission profiles; Chemicals; Electromagnetic wave absorption; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; PIN photodiodes; Satellites; Substrates; Temperature measurement; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.492305
Filename :
492305
Link To Document :
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