Cu / Barrier Metal Stack Film Characterization for Reliability Estimation

Author

Ogawa, Shinichi ; Ohdaira, Toshiyuki ; Hosoi, Nobuki ; Tarumi, Nobuaki ; Suzuki, Ryoichi ; Saito, Shuichi

Author_Institution

Semicond. Leading Edge Technol. Inc., Tsukuba

fYear

2007

fDate

4-6 June 2007

Firstpage

52

Lastpage

54

Abstract

Elapsed time change in sheet resistance (SR) of Cu/barrier metal stacks have been evaluated correlated with behaviors of vacancies in Cu films at Cu/barrier interface areas (Cu barrier interfaces) by a positron-annihilation lifetime spectroscopy (PALS), and it was shown that the elapsed time change in SR strongly related to positron mean lifetime, namely vacancy clusters size, and those film properties showed a reasonable correlation with a reported SIV characteristics.

Keywords

copper; interconnections; low-k dielectric thin films; positron annihilation; reliability; Cu-barrier metal stack film; Cu-low-k interconnect; film properties; positron mean lifetime; positron-annihilation lifetime spectroscopy; reliability estimation; sheet resistance; vacancy clusters size; Annealing; Lead compounds; Metals industry; Positrons; Probability density function; Semiconductor device reliability; Semiconductor films; Strontium; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

International Interconnect Technology Conference, IEEE 2007

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-1069-X

Electronic_ISBN

1-4244-1070-3

Type

conf

DOI

10.1109/IITC.2007.382339

Filename

4263651