Meander type LPE-new approach to growth InP and GaInAsP layers

Author

Nohavica, D. ; Gladkov, P. ; Lourenco, M.A. ; Yang, Z. ; Homewood, K.P. ; Ehrentraut, D.

Author_Institution

Inst. of Radio Eng. & Electron., Czechoslovak Acad. of Sci., Prague, Czech Republic

fYear

1996

fDate

21-25 Apr 1996

Firstpage

560

Lastpage

563

Abstract

The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga_.21In_.79As_.75P_.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth

Keywords

III-V semiconductors; crystal morphology; gallium arsenide; gallium compounds; indium compounds; interface structure; liquid phase epitaxial growth; semiconductor growth; semiconductor heterojunctions; (100) orientation; Ga_.21In_.79As_.75P_.25; GaInAsP; GaInAsP-InP; GaInAsP/InP material system; InP; InP growth; InP substrates; composition; epitaxial technique; growth interfaces; liquid phase epitaxy; meander type LPE; meander type technique; perpendicular lattice mismatch; quaternary solid solution; quaternary strained layers; surface morphology; Delta modulation; Epitaxial growth; Indium phosphide; Lattices; Samarium; Solids; Substrates; Surface morphology; Testing; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492308

Filename

492308