Strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs for photonic devices

Author

Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Steinhagen, F. ; Burkhard, H.

Author_Institution

Deutsche Bundespost Telekom, Darmstadt, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

565

Lastpage

568

Abstract

Strain compensated QW samples with compressively strained wells and tensile strained barriers have been grown by MBE and studied by low temperature photoluminescence. The PL linewidths are narrow, decrease with growing well widths, and increase only weakly with rising number of wells

Keywords

aluminium compounds; gallium arsenide; indium compounds; internal stresses; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line breadth; spectral line intensity; AlGaInAs-AlGaInAs-InP; MBE; PL linewidths; compressively strained wells; low temperature photoluminescence; photonic devices; strain compensated QW samples; strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs; tensile strained barriers; well widths; Capacitive sensors; Indium phosphide; Laser applications; Laser modes; Lattices; Molecular beam epitaxial growth; Optical materials; Optoelectronic devices; Quantization; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492310

Filename

492310