• DocumentCode
    2963570
  • Title

    Development of an Eco-friendly Copper Interconnect Cleaning Process

  • Author

    Uozumi, Yoshihiro ; Nakajima, Takahito ; Matsumura, Tsuyoshi ; Yoshimizu, Yasuhito ; Tomita, Hiroshi

  • Author_Institution
    Toshiba Corp., Yokohama
  • fYear
    2007
  • fDate
    4-6 June 2007
  • Firstpage
    25
  • Lastpage
    27
  • Abstract
    This paper reports the development of an eco-friendly, low-cost and clean wet cleaning process in forming copper interconnections, especially on a copper surface at the bottom of the via. From analysis and electrical data, the components of post-etch residues are mainly formed by copper fluorides, copper oxides and silicon oxides. Therefore, diluted inorganic acid solutions are used to remove these polymers and a diluted amine solution is used to stabilize the copper surface after cleaning. These chemicals are treated by an effluent treatment facility, and are very cheap and clean. In the results of post-cleaning, the analysis data shows that the residues are removed, and the electrical data such as via chain yield, electro migration, etc., shows good performance.
  • Keywords
    copper; effluents; etching; interconnections; semiconductor technology; surface cleaning; Cu; copper fluorides; copper oxides; diluted amine solution; diluted inorganic acid solutions; eco-friendly copper interconnect cleaning process; effluent treatment facility; post-etch residues; silicon oxides; Chemicals; Contacts; Copper; Data analysis; Dry etching; Effluents; Polymers; Semiconductor device manufacture; Silicon; Surface cleaning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Interconnect Technology Conference, IEEE 2007
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    1-4244-1069-X
  • Electronic_ISBN
    1-4244-1070-3
  • Type

    conf

  • DOI
    10.1109/IITC.2007.382341
  • Filename
    4263653