DocumentCode
2963570
Title
Development of an Eco-friendly Copper Interconnect Cleaning Process
Author
Uozumi, Yoshihiro ; Nakajima, Takahito ; Matsumura, Tsuyoshi ; Yoshimizu, Yasuhito ; Tomita, Hiroshi
Author_Institution
Toshiba Corp., Yokohama
fYear
2007
fDate
4-6 June 2007
Firstpage
25
Lastpage
27
Abstract
This paper reports the development of an eco-friendly, low-cost and clean wet cleaning process in forming copper interconnections, especially on a copper surface at the bottom of the via. From analysis and electrical data, the components of post-etch residues are mainly formed by copper fluorides, copper oxides and silicon oxides. Therefore, diluted inorganic acid solutions are used to remove these polymers and a diluted amine solution is used to stabilize the copper surface after cleaning. These chemicals are treated by an effluent treatment facility, and are very cheap and clean. In the results of post-cleaning, the analysis data shows that the residues are removed, and the electrical data such as via chain yield, electro migration, etc., shows good performance.
Keywords
copper; effluents; etching; interconnections; semiconductor technology; surface cleaning; Cu; copper fluorides; copper oxides; diluted amine solution; diluted inorganic acid solutions; eco-friendly copper interconnect cleaning process; effluent treatment facility; post-etch residues; silicon oxides; Chemicals; Contacts; Copper; Data analysis; Dry etching; Effluents; Polymers; Semiconductor device manufacture; Silicon; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
International Interconnect Technology Conference, IEEE 2007
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-1069-X
Electronic_ISBN
1-4244-1070-3
Type
conf
DOI
10.1109/IITC.2007.382341
Filename
4263653
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