• DocumentCode
    296358
  • Title

    Carrier lifetime in carbon doped In0.53Ga0.47As

  • Author

    Sermage, B. ; Benchimol, J.L. ; Michel, J.C. ; Alexandre, F. ; Launay, P. ; Caffin, D.

  • Author_Institution
    Lab. de Bagneux, CNET, Bagneux, France
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    572
  • Lastpage
    575
  • Abstract
    Carrier lifetime has been measured in carbon doped CBE grown In 0.53Ga0.47As by time resolved luminescence with 3 ps resolution. For doping levels between 3.1018 cm-3 and 7.1019 cm-3, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors
  • Keywords
    Auger effect; III-V semiconductors; carbon; carrier lifetime; electrical resistivity; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoluminescence; semiconductor epitaxial layers; time resolved spectra; 4 to 400 ps; Auger recombination; DC current gain; In0.53Ga0.47As:C; base sheet resistance; carbon doped CBE grown In0.53Ga0.47As; carbon doped In0.53Ga0.47As; carrier lifetime; doping levels; heterojunction bipolar transistor; time resolved luminescence; Cameras; Charge carrier lifetime; Current measurement; Doping; Electrons; Indium gallium arsenide; Laser excitation; Luminescence; Performance gain; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.492312
  • Filename
    492312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=296358