Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth

Author

Tiginyanu, I.M. ; Ursaki, V.V. ; Pödör, B. ; Csontos, L. ; Shontya, V.P.

Author_Institution

Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova

fYear

1996

fDate

21-25 Apr 1996

Firstpage

602

Lastpage

605

Abstract

The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of rare earth elements in LPE of III-Vs. An important outcome of this study is that Raman scattering provides a non-destructive, simple and accurate way to characterize the InGaAs layers

Keywords

III-V semiconductors; Raman spectra; dysprosium; gallium arsenide; indium compounds; interface structure; liquid phase epitaxial growth; semiconductor doping; semiconductor growth; semiconductor heterojunctions; Dy doping level; III-V semiconductor; InGaAs layers; InGaAs-InP; InGaAs:Dy/InP; InP; LPE; Raman scattering; Raman scattering analysis; liquid phase epitaxial growth; nondestructive method; rare earth addition; rare earth elements; Atomic layer deposition; Atomic measurements; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Light scattering; Particle scattering; Raman scattering; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492320

Filename

492320