Title :
As desorption from InGaAs monolayer during PH3-purge in OMVPE growth of InP/InGaAs(1 ML)/InP heterostructures measured by X-ray CTR scattering
Author :
Tabuchi, M. ; Yamada, N. ; Ichiki, S. ; Takeda, Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
Abstract :
In this work, the effect of PH3-purge after the growth of the heterolayer was investigated for InP/InGaAs(1 ML)/InP heterostructures. InP/InGaAs/InP samples were prepared by low pressure OMVPE on InP(001) substrates using TEGa, TMIn, AsII3 and PH 3 as source gases. The growth temperature was set at 620°C
Keywords :
III-V semiconductors; X-ray scattering; desorption; gallium arsenide; indium compounds; interface structure; monolayers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; 620 C; As desorption; AsII3; InGaAs monolayer; InP; InP(001) substrates; InP-InGaAs-InP; InP/InGaAs/InP heterostructures; OMVPE growth; PH3; PH3-purge; TEGa; TMIn; X-ray CTR scattering; growth temperature; heterolayer; low pressure OMVPE; source gases; Atomic layer deposition; Cameras; Gallium arsenide; Helium; Indium gallium arsenide; Indium phosphide; Physics; Production facilities; Shape; X-ray imaging;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492321
