Title :
Performance predictions of prospective air gap architectures for the 22 nm node
Author :
Gallitre, M. ; Gosset, L.G. ; Farcy, A. ; Blampey, B. ; Gras, R. ; Bermond, C. ; Fléchet, B. ; Torres, J.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
With technological developments towards 22 nm node ICs, integration and process issues will be critical for signal propagation on interconnects. Air gap architecture, as a potential alternative to porous dielectrics, is thus analyzed for two SiO2 sacrificial approaches. Thanks to electromagnetic and time-domain simulations, extraction of barrier properties and dimensions limits regarding capacitance, delay and crosstalk parameters is realized, leading to the proposal of a specific stack as a global solution to this problematic.
Keywords :
air gaps; dielectric materials; integrated circuit interconnections; porous materials; silicon compounds; time-domain analysis; IC interconnects; IC technological development; air gap architecture; barrier properties; electromagnetic simulation; porous dielectrics; signal propagation; size 22 nm; time-domain simulation; Capacitance; Chemistry; Crosstalk; Delay; Dielectric materials; Electromagnetic propagation; Hafnium; Inorganic materials; Signal processing; Time domain analysis;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382374
