• DocumentCode
    2964559
  • Title

    Role of nucleation in the nanowire growth and properties

  • Author

    Dubrovskii, V.G.

  • Author_Institution
    St. Petersburg Phys. & Technol. Centre for Res. & Educ., Ioffe Phys. Tech. Inst. RAS, St. Petersburg
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    26
  • Lastpage
    27
  • Abstract
    Nucleation of two-dimensional islands from a liquid alloy is generally considered as one of the most important processes driving the ldquovapour-liquid-solidrdquo catalyst-assisted growth of semiconductor nanowires. This talk presents an overview of theoretical and experimental results concerning the influence of nucleation on the morphology and structure of different III-V nanowires. In particular, it will be shown that nucleation at the triple line leads to the formation of hexagonal wurtzite crystal phase in nanowires of zinc blende III-V materials.
  • Keywords
    III-V semiconductors; gallium arsenide; nanotechnology; nanowires; nucleation; semiconductor growth; semiconductor quantum wires; GaAs; hexagonal wurtzite crystal phase; morphology; nucleation; semiconductor nanowires; two-dimensional islands; vapour-liquid-solid catalyst-assisted growth; zinc blende lll-V materials; Chemicals; Crystalline materials; Educational technology; Gallium arsenide; III-V semiconductor materials; Morphology; Nanoelectronics; Optical materials; Physics education; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634422
  • Filename
    4634422