DocumentCode
2964559
Title
Role of nucleation in the nanowire growth and properties
Author
Dubrovskii, V.G.
Author_Institution
St. Petersburg Phys. & Technol. Centre for Res. & Educ., Ioffe Phys. Tech. Inst. RAS, St. Petersburg
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
26
Lastpage
27
Abstract
Nucleation of two-dimensional islands from a liquid alloy is generally considered as one of the most important processes driving the ldquovapour-liquid-solidrdquo catalyst-assisted growth of semiconductor nanowires. This talk presents an overview of theoretical and experimental results concerning the influence of nucleation on the morphology and structure of different III-V nanowires. In particular, it will be shown that nucleation at the triple line leads to the formation of hexagonal wurtzite crystal phase in nanowires of zinc blende III-V materials.
Keywords
III-V semiconductors; gallium arsenide; nanotechnology; nanowires; nucleation; semiconductor growth; semiconductor quantum wires; GaAs; hexagonal wurtzite crystal phase; morphology; nucleation; semiconductor nanowires; two-dimensional islands; vapour-liquid-solid catalyst-assisted growth; zinc blende lll-V materials; Chemicals; Crystalline materials; Educational technology; Gallium arsenide; III-V semiconductor materials; Morphology; Nanoelectronics; Optical materials; Physics education; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634422
Filename
4634422
Link To Document