• DocumentCode
    2964768
  • Title

    Long wavelength lasers with very fine structures and their applications to photonic integrated circuits

  • Author

    Arai, Shigehisa

  • Author_Institution
    Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    With aiming at realization of extremely low power consumption active devices for optical interconnections and photonic integrated circuits (PICs), we have been exploring GaInAsP/InP long wavelength lasers consisting of high index-contrast gratings by low-damage fabrication processes. Moreover, active photonic devices based on high index-contrast waveguides, so called dasiaSemiconductor Membrane Lasers,psila have been investigated from their advantage of an enhancement of the optical confinement factor of the active region.
  • Keywords
    III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; semiconductor lasers; DFB laser; DR laser; GaInAs-InP; distributed feedback laser; high index-contrast gratings; high index-contrast waveguides; long wavelength lasers; low power consumption active devices; optical confinement factor; optical interconnections; photonic integrated circuits; semiconductor membrane lasers; very fine structures; Energy consumption; Gratings; Indium phosphide; Optical device fabrication; Optical interconnections; Optical waveguides; Photonic integrated circuits; Power lasers; Ultraviolet sources; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634434
  • Filename
    4634434