DocumentCode
2964768
Title
Long wavelength lasers with very fine structures and their applications to photonic integrated circuits
Author
Arai, Shigehisa
Author_Institution
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
50
Lastpage
51
Abstract
With aiming at realization of extremely low power consumption active devices for optical interconnections and photonic integrated circuits (PICs), we have been exploring GaInAsP/InP long wavelength lasers consisting of high index-contrast gratings by low-damage fabrication processes. Moreover, active photonic devices based on high index-contrast waveguides, so called dasiaSemiconductor Membrane Lasers,psila have been investigated from their advantage of an enhancement of the optical confinement factor of the active region.
Keywords
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; semiconductor lasers; DFB laser; DR laser; GaInAs-InP; distributed feedback laser; high index-contrast gratings; high index-contrast waveguides; long wavelength lasers; low power consumption active devices; optical confinement factor; optical interconnections; photonic integrated circuits; semiconductor membrane lasers; very fine structures; Energy consumption; Gratings; Indium phosphide; Optical device fabrication; Optical interconnections; Optical waveguides; Photonic integrated circuits; Power lasers; Ultraviolet sources; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634434
Filename
4634434
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