• DocumentCode
    2965010
  • Title

    Improving baseline stability of gas sensors based on organic field-effect transistors by monitoring carrier mobility

  • Author

    Mori, Tomohiko ; Kikuzawa, Yoshihiro ; Noda, Koji

  • Author_Institution
    Toyota Central R&D Labs., Inc., Nagakute, Japan
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    1002
  • Lastpage
    1005
  • Abstract
    We have investigated the baseline stability of gas sensors based on organic field-effect transistors (OFETs). The time response of the drain current, carrier mobility, and threshold voltage to exposure to humidity were monitored. The extraction of these multiple parameters has so far been reported in order to enhance sensitivity and/or discrimination. We found that the time response of the carrier mobility possesses baseline stability, as opposed to the drain current and threshold voltage. The baseline drifts with time are mainly due to shifts in the threshold voltage that affect the drain current. Our results are expected to assist in making OFET-based gas sensors suitable for practical applications.
  • Keywords
    carrier mobility; gas sensors; organic field effect transistors; threshold elements; baseline stability; carrier mobility monitoring; drain current; gas sensors; humidity; organic field effect transistors; threshold voltage; time response; Humidity; Logic gates; OFETs; Organic semiconductors; Substrates; Threshold voltage; Time factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6126923
  • Filename
    6126923