DocumentCode
2965010
Title
Improving baseline stability of gas sensors based on organic field-effect transistors by monitoring carrier mobility
Author
Mori, Tomohiko ; Kikuzawa, Yoshihiro ; Noda, Koji
Author_Institution
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
1002
Lastpage
1005
Abstract
We have investigated the baseline stability of gas sensors based on organic field-effect transistors (OFETs). The time response of the drain current, carrier mobility, and threshold voltage to exposure to humidity were monitored. The extraction of these multiple parameters has so far been reported in order to enhance sensitivity and/or discrimination. We found that the time response of the carrier mobility possesses baseline stability, as opposed to the drain current and threshold voltage. The baseline drifts with time are mainly due to shifts in the threshold voltage that affect the drain current. Our results are expected to assist in making OFET-based gas sensors suitable for practical applications.
Keywords
carrier mobility; gas sensors; organic field effect transistors; threshold elements; baseline stability; carrier mobility monitoring; drain current; gas sensors; humidity; organic field effect transistors; threshold voltage; time response; Humidity; Logic gates; OFETs; Organic semiconductors; Substrates; Threshold voltage; Time factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6126923
Filename
6126923
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