DocumentCode :
2965062
Title :
Optical properties of GaN: from free excitons in the bulk to confined negatively charged excitons in quantum dots grown by molecular beam epitaxy
Author :
Gil, Bernard
Author_Institution :
Groupe d´´Etude des semiconducteurs, Univ. Montpellier 2, Montpellier
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
83
Lastpage :
83
Abstract :
After reviewing fourtty years investigations of the optical properties of GaN bulk and thin film crystals grown along any crystallographic directions, I finally address the low dimensional systems and in particular, the optical properties of GaN quantum dots grown by molecular beam epitaxy and that are surprisingly compatible with recombinations of negatively charged excitons.
Keywords :
III-V semiconductors; excitons; gallium compounds; molecular beam epitaxial growth; semiconductor quantum dots; wide band gap semiconductors; GaN; confined negatively charged excitons; free excitons; molecular beam epitaxy; optical properties; quantum dots; Books; Crystallography; Crystals; Excitons; Gallium nitride; Gas insulated transmission lines; Molecular beam epitaxial growth; Optical films; Quantum dots; Semiconductor thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634455
Filename :
4634455
Link To Document :
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