Title :
Optical properties of GaN: from free excitons in the bulk to confined negatively charged excitons in quantum dots grown by molecular beam epitaxy
Author_Institution :
Groupe d´´Etude des semiconducteurs, Univ. Montpellier 2, Montpellier
Abstract :
After reviewing fourtty years investigations of the optical properties of GaN bulk and thin film crystals grown along any crystallographic directions, I finally address the low dimensional systems and in particular, the optical properties of GaN quantum dots grown by molecular beam epitaxy and that are surprisingly compatible with recombinations of negatively charged excitons.
Keywords :
III-V semiconductors; excitons; gallium compounds; molecular beam epitaxial growth; semiconductor quantum dots; wide band gap semiconductors; GaN; confined negatively charged excitons; free excitons; molecular beam epitaxy; optical properties; quantum dots; Books; Crystallography; Crystals; Excitons; Gallium nitride; Gas insulated transmission lines; Molecular beam epitaxial growth; Optical films; Quantum dots; Semiconductor thin films;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634455