DocumentCode :
2965402
Title :
Fabrication and characteristics of hydrogen sensors based on porous SiC for harsh environments
Author :
Kim, Kang-San ; Chung, Gwiy-Sang
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
1010
Lastpage :
1013
Abstract :
Porous 3C-SiC (pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC film by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd nanoparticles as a hydrogen catalyst. In this work, two kinds of hydrogen sensors are employed for high temperature application. The variations of the electrical resistance and current in the presence of nitrogen diluted with hydrogen demonstrated that Pd deposited pSiC samples have the ability to detect hydrogen at high temperatures.
Keywords :
anodisation; electrochemistry; gas sensors; nanoparticles; porous materials; silicon compounds; surface treatment; chemical modification; electrochemical anodization; harsh environments; hydrogen sensors; porous SiC; Gas detectors; Schottky diodes; Sensor phenomena and characterization; Temperature; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6126945
Filename :
6126945
Link To Document :
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