Title :
Fabrication and characteristics of hydrogen sensors based on porous SiC for harsh environments
Author :
Kim, Kang-San ; Chung, Gwiy-Sang
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
Abstract :
Porous 3C-SiC (pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC film by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd nanoparticles as a hydrogen catalyst. In this work, two kinds of hydrogen sensors are employed for high temperature application. The variations of the electrical resistance and current in the presence of nitrogen diluted with hydrogen demonstrated that Pd deposited pSiC samples have the ability to detect hydrogen at high temperatures.
Keywords :
anodisation; electrochemistry; gas sensors; nanoparticles; porous materials; silicon compounds; surface treatment; chemical modification; electrochemical anodization; harsh environments; hydrogen sensors; porous SiC; Gas detectors; Schottky diodes; Sensor phenomena and characterization; Temperature; Temperature measurement; Temperature sensors;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6126945