• DocumentCode
    2965563
  • Title

    Simulation of active regions for GaSb-based VCSELs

  • Author

    Kashani-Shirazi, K. ; Bachmann, A. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Garching
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    The calculation of band structures and the carrier densities leads to new rules for the optimization of the active region in GaSb-based VCSELs emitting at 2.3 mum. The simulation was performed with Nextnano++.
  • Keywords
    III-V semiconductors; carrier density; gallium compounds; semiconductor lasers; surface emitting lasers; GaSb; GaSb-based VCSELs; active region; band structures; carrier densities; optimization; wavelength 2.3 mum; Charge carrier density; Current density; Diode lasers; Electromagnetic wave absorption; Electrons; Filling; Light sources; Tunable circuits and devices; Vertical cavity surface emitting lasers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634483
  • Filename
    4634483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2965563