DocumentCode
2965641
Title
Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices
Author
Pesare, Marcello ; Giorgio, Agostino ; Perri, Anna Gina
Author_Institution
Dipt. di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
Volume
1
fYear
2000
fDate
2000
Firstpage
146
Abstract
In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; thermal analysis; 2D Fourier transform; GaAs; GaAs MESFET; Kirchhoff transformation; channel temperature; drain current; electrothermal model; integrated circuit device; multilayer structure; nonlinear 3D heat equation; thermal conductivity; Electrothermal effects; FETs; Feedback; Gallium arsenide; MESFETs; Mathematical model; Nonhomogeneous media; Nonlinear equations; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location
Jounieh
Print_ISBN
0-7803-6542-9
Type
conf
DOI
10.1109/ICECS.2000.911505
Filename
911505
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