Title :
Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices
Author :
Pesare, Marcello ; Giorgio, Agostino ; Perri, Anna Gina
Author_Institution :
Dipt. di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
Abstract :
In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; thermal analysis; 2D Fourier transform; GaAs; GaAs MESFET; Kirchhoff transformation; channel temperature; drain current; electrothermal model; integrated circuit device; multilayer structure; nonlinear 3D heat equation; thermal conductivity; Electrothermal effects; FETs; Feedback; Gallium arsenide; MESFETs; Mathematical model; Nonhomogeneous media; Nonlinear equations; Temperature; Thermal conductivity;
Conference_Titel :
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location :
Jounieh
Print_ISBN :
0-7803-6542-9
DOI :
10.1109/ICECS.2000.911505
