A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices

Author

Yu, J. ; Shafiei, M. ; Ou, J. ; Shin, K. ; Wlodarski, W.

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia

fYear

2011

fDate

28-31 Oct. 2011

Firstpage

1017

Lastpage

1020

Abstract

In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I-V) and dynamic response of the developed devices were investigated in forward and reverse bias operation at an optimum temperature of 160°C. Voltage shifts of 661.1 and 484.9 mV were recorded towards 1% hydrogen at forward and reverse constant bias current of 1 mA, respectively.

Keywords

CVD coatings; III-V semiconductors; Raman spectra; X-ray photoelectron spectra; gallium compounds; gas sensors; graphene; hydrogen; platinum; semiconductor devices; GaN; GaN substrate; H₂; Pt-C-GaN; Pt/graphene/GaN devices; Raman spectroscopy; X-ray photoelectron spectroscopy; chemical vapour deposition technique; current-voltage response; dynamic response; forward bias operation; graphene layer; hydrogen gas sensing performance; reverse bias operation; temperature 160 degC; voltage shifts; Films; Gallium nitride; Metals; Performance evaluation; Sensors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2011 IEEE

Conference_Location

Limerick

ISSN

1930-0395

Print_ISBN

978-1-4244-9290-9

Type

conf

DOI

10.1109/ICSENS.2011.6126969

Filename

6126969