Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode: A comparative study

Author

Shafiei, M. ; Yu, J. ; Breedon, M. ; Motta, N. ; Wu, Q. ; Hu, Z. ; Qian, L. ; Kalantar-Zadeh, K. ; Wlodarski, W.

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia

fYear

2011

fDate

28-31 Oct. 2011

Firstpage

8

Lastpage

11

Abstract

In this paper, a comparative study of Pt/nanostructured MoO₃/SiC Schottky diode based hydrogen gas sensors is presented. MoO₃ nanostructured films with three different morphologies (nanoplatelets, nanoplatelets-nanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO₃ nano-flowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO₃ nanoplatelets showed the quickest response (t_90%-40s).

Keywords

Schottky diodes; dynamic response; gas sensors; hydrogen; molybdenum compounds; nanosensors; nanowires; platinum; silicon compounds; thin film sensors; wide band gap semiconductors; H₂; Pt-MoO₃-SiC; current-voltage characteristic; dynamic response; gas sensor; nanoflower morphology; nanoplatelet morphology; nanoplatelet-nanowire morphology; nanostructured film; thermally evaporated nanostructured Schottky diode; voltage 5.79 V; Gas detectors; Morphology; Nanostructures; Schottky diodes; Sensor phenomena and characterization; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2011 IEEE

Conference_Location

Limerick

ISSN

1930-0395

Print_ISBN

978-1-4244-9290-9

Type

conf

DOI

10.1109/ICSENS.2011.6126970

Filename

6126970