Title :
Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy
Author :
Bastek, B. ; Bertram, F. ; Christen, J. ; Wernicke, T. ; Weyers, M. ; Kneissl, M.
Author_Institution :
Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg
Abstract :
The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.
Keywords :
III-V semiconductors; cathodoluminescence; electron-hole recombination; excitons; gallium compounds; semiconductor epitaxial layers; semiconductor quantum wells; stacking faults; thermionic electron emission; time resolved spectra; wide band gap semiconductors; GaN; a-plane ELO structures; a-plane epitaxial lateral overgrowth structures; basal plane stacking fault emission; free exciton; hole thermionic emission; microscopic recombination kinetics; ps-time-resolved cathodoluminescence microscopy; quantum well; Excitons; Gallium nitride; Kinetic theory; Luminescence; Microscopy; Optical polarization; Physics; Piezoelectric polarization; Radiative recombination; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634505
