DocumentCode :
2966012
Title :
Room-temperature direct bonding for integrated optical devices
Author :
Takei, Ryohei ; Abe, Kenji ; Mizumoto, Tetsuya
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
203
Lastpage :
204
Abstract :
We report a room-temperature direct bonding techniques for water combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This techniques is versatile for integrated optical devices that are composed of different crystals.
Keywords :
bonding processes; cerium; indium compounds; integrated optics; lithium compounds; optical materials; silicon compounds; yttrium compounds; InP-(YIG:Ce); Si-InP; Si-LiNbO3; integrated optical devices; room-temperature direct bonding techniques; temperature 293 K to 298 K; water combination; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Integrated optics; Optical devices; Optical waveguides; Plasma temperature; Stimulated emission; Thermal stresses; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634511
Filename :
4634511
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966012
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