GaInAsP/InP lateral current injection laser grown on SI-InP substrate for membrane photonic integrated circuits

Author

Okumura, Takashi ; Kurokawa, Mori ; Shirao, M. ; Kondo, Daishi ; Ito, H. ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo

fYear

2008

fDate

2-15 Aug. 2008

Firstpage

229

Lastpage

230

Abstract

A lateral current injection laser with a thin (400 nm) core structure grown on a semi-insulating InP substrate was realized and a room-temperature (RT) pulsed operation was obtained. A threshold current of 105 mA, which corresponds to a threshold current density of 1.3 kA/cm², was obtained for a 1.47 mm long Fabry-Perot cavity laser.

Keywords

Fabry-Perot resonators; current density; gallium compounds; indium compounds; integrated optics; laser cavity resonators; semiconductor lasers; Fabry-Perot cavity laser; GaInAsP-InP; InP; lateral current injection laser; membrane photonic integrated circuits; room-temperature pulsed operation; semiinsulating substrate; size 1.47 mm; size 400 nm; temperature 293 K to 298 K; thin core structure; threshold current density; Biomembranes; Indium phosphide; Optical polymers; Optical waveguides; Photonic integrated circuits; Pump lasers; Semiconductor lasers; Substrates; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Conference_Location

Shonan Village

Print_ISBN

978-1-4244-2656-0

Type

conf

DOI

10.1109/INOW.2008.4634521

Filename

4634521