DocumentCode
2966412
Title
Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs
Author
Lai, Wang ; Yi, Luo ; Yanjun, Han ; Hongtao, Li ; Guangyi, Xi ; Yang, Jiang ; Wei, Zhao
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
257
Lastpage
258
Abstract
InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.
Keywords
III-V semiconductors; diffusion; gallium compounds; indium compounds; light emitting diodes; semiconductor doping; semiconductor quantum wells; silicon; wide band gap semiconductors; InGaN-GaN:Si; MQW LEDs; diffusion; doping; electrical characteristics; electrical properties; optical properties; Excitons; Gallium nitride; Integrated optics; Integrated optoelectronics; Laboratories; Light emitting diodes; Optical buffering; Phonons; Quantum well devices; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634535
Filename
4634535
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