Carbon Nanotube Based Dielectric for Enhanced RF MEMS Reliability

Author

Bordas, Chloe ; Grenier, Katia ; Dubuc, David ; Flahaut, Emmanuel ; Pacchini, Sebastien ; Paillard, Mathieu ; Cazaux, Jean-Louis

Author_Institution

LAAS-CNRS, Toulouse

fYear

2007

fDate

3-8 June 2007

Firstpage

375

Lastpage

378

Abstract

This paper presents the fabrication and experimental results of capacitive MEM switches with a carbon nanotubes (CNT) based dielectric for the first time to our knowledge. Double wall nanotubes (DWNT) have been incorporated in the switch silicon nitride dielectric to modify its properties regarding the charging effect. The impact of the CNT density on the MEMS reliability has been demonstrated: a switch lifetime enhancement greater than two orders of magnitude has been achieved.

Keywords

carbon nanotubes; dielectric devices; microswitches; monolithic integrated circuits; RF MEMS reliability; capacitive MEM switches; carbon nanotubes dielectrics; double wall nanotubes; switch silicon nitride dielectrics; Carbon nanotubes; Dielectric substrates; Fabrication; Micromechanical devices; Power system reliability; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches; Voltage; Carbon nanotube; RF MEMS; dielectric charging; reliability; switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380449

Filename

4263826