• DocumentCode
    2966466
  • Title

    Dependency of InAs QDs using GaxIn1−xAs second cap layer in the double-cap procedure

  • Author

    Akaishi, M. ; Saito, Y. ; Shimomura, K.

  • Author_Institution
    Sophia Univ., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    263
  • Lastpage
    265
  • Abstract
    We have successfully demonstrated the GaxIn1-xAs cap layer dependence on the self assembled Stranski - Krastanov (S-K) InAs quantum dots (QDs) using double-cap procedure and MOVPE selective area growth.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; self-assembly; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-GaxIn1-xAs; MOVPE selective area growth; double-cap procedure; second cap layer; self assembled Stranski-Krastanov quantum dots; Buffer layers; Epitaxial growth; Epitaxial layers; Fluctuations; Indium phosphide; Optical buffering; Optical waveguides; Quantum dot lasers; Size control; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634538
  • Filename
    4634538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966466