DocumentCode :
2966466
Title :
Dependency of InAs QDs using GaxIn1−xAs second cap layer in the double-cap procedure
Author :
Akaishi, M. ; Saito, Y. ; Shimomura, K.
Author_Institution :
Sophia Univ., Tokyo
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
263
Lastpage :
265
Abstract :
We have successfully demonstrated the GaxIn1-xAs cap layer dependence on the self assembled Stranski - Krastanov (S-K) InAs quantum dots (QDs) using double-cap procedure and MOVPE selective area growth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; self-assembly; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-GaxIn1-xAs; MOVPE selective area growth; double-cap procedure; second cap layer; self assembled Stranski-Krastanov quantum dots; Buffer layers; Epitaxial growth; Epitaxial layers; Fluctuations; Indium phosphide; Optical buffering; Optical waveguides; Quantum dot lasers; Size control; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634538
Filename :
4634538
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966466
بازگشت