DocumentCode
2966480
Title
Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy.
Author
Vadivelu, Ramesh ; Kikuchi, Akihiko ; Kishino, Katsumi
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
265
Lastpage
266
Abstract
The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.
Keywords
III-V semiconductors; etching; gallium compounds; indium compounds; molecular beam epitaxial growth; nanopatterning; photoluminescence; piezoelectricity; plasma materials processing; semiconductor growth; semiconductor quantum wells; stress relaxation; wide band gap semiconductors; InGaN-GaN; electron-hole separation; nanopattern etching; photoluminescence; quantum well structures; rf-plasma assisted molecular beam epitaxy; strain relaxation; strain-induced piezoelectric-field; Capacitive sensors; Charge carrier processes; Electron emission; Etching; Gallium nitride; Molecular beam epitaxial growth; Optoelectronic devices; Plasma temperature; Quantum well devices; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634539
Filename
4634539
Link To Document