Modeling and Characterization of Sub-nanosecond Impulse Response of High-Voltage Heterojunction Bipolar Transistors

Author

Haider, Shahid ; Renfeng Jin ; Hwang, J.C.M. ; Jiyoun Lim ; Sanghoon Cheon

Author_Institution

Lehigh Univ., Bethlehem

fYear

2007

fDate

3-8 June 2007

Firstpage

609

Lastpage

612

Abstract

Sub-nanosecond impulse response of high-voltage InGaAs/GaAs HBTs was characterized by using a time-domain sampling oscilloscope with the cable delay and loss corrected in frequency domain. A peak voltage of 10 V with a width of 200 ps was obtained, which was attributed to the delayed onset of the Kirk effect. The Agilent HBT model was modified to account for the stronger-than-expected field and temperature dependence of the Kirk effect. The modified model correctly predicts the impulse response of the HBT and, hence, can be used in the design and simulation of impulse-based ultra-wideband circuits.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-voltage techniques; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; transient response; Agilent HBT model; InGaAs-GaAs; Kirk effect; high-voltage heterojunction bipolar transistors; impulse response; impulse-based ultra-wideband circuits; sub-nanosecond impulse response; time-domain sampling oscilloscope; voltage 10 V; Delay; Frequency domain analysis; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Kirk field collapse effect; Oscilloscopes; Predictive models; Sampling methods; Time domain analysis; Heterojunction bipolar transistors; impulse testing; microwave devices; modeling; pulse amplifiers; pulse measurements; time domain measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0687-0

Type

conf

DOI

10.1109/MWSYM.2007.379974

Filename

4263889