DocumentCode
296763
Title
Polymers caused by CF4 plasma etching trimming process and its effects on SAW device characteristics
Author
Komine, Kenji ; Kouchi, Akira ; Noge, Satoru ; Hohkawa, Kohji
Author_Institution
Meidensha Corp., Tokyo, Japan
Volume
1
fYear
1995
fDate
7-10 Nov 1995
Firstpage
211
Abstract
This paper investigates residual polymers caused by the CF4 plasma etching trimming process on narrow bandwidth surface acoustic wave devices. Experimental results show that a small quantity of residuals remain even under the trimming conditions used in production. When the devices are exposed to water vapor, a systematic frequency shift occurs in the device-center-frequency. We report the experimental results of studies on physical and chemical features of residuals. We also show that this phenomenon applies to the recovery process of slightly over-trimmed devices
Keywords
polymers; sputter etching; surface acoustic wave devices; CF4 plasma etching trimming process; SAW device characteristics; devices-center-frequency; frequency shift; narrow bandwidth devices; recovery process; residual polymers; surface acoustic wave devices; water vapor exposure; Acoustic waves; Bandwidth; Etching; Frequency; Plasma applications; Plasma devices; Plasma waves; Polymers; Production; Surface acoustic wave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location
Seattle, WA
ISSN
1051-0117
Print_ISBN
0-7803-2940-6
Type
conf
DOI
10.1109/ULTSYM.1995.495570
Filename
495570
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