DocumentCode

2968366

Title

WE3G: Linear Device Modelling

fYear

2007

fDate

3-8 June 2007

Firstpage

781

Lastpage

781

Keywords

Circuits; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; PHEMTs; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI, USA

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380056

Filename

4263935