Integrated development and manufacturing methodology for advanced power MOSFETs

Author

Kasem, Mohammed

Author_Institution

Temic Semicond. (Silconix) Inc., Santa Clara, CA, USA

fYear

1997

fDate

13-15 Oct 1997

Firstpage

20

Lastpage

24

Abstract

This paper briefly illustrates the principles of Integrated Product Development (IPD) as an effective framework for new product development. However, the success of management implementing IPD is dependent on a number of fundamental changes in the current development process. These include emphasis on teamwork and the expansion of the role of manufacturing, as well as the application of Design for Manufacturability (DFM) as a business driver. The paper also describes the superior characteristics of 8-lead power TSSOP packages, which were developed for ultra high density Trench MOSFETs using IPD principles

Keywords

design for manufacture; power MOSFET; product development; semiconductor device packaging; design for manufacturability; integrated product development; power MOSFETs; power TSSOP packages; teamwork; trench MOSFETs; Costs; Design for manufacture; Energy management; Isolation technology; MOSFETs; Manufacturing processes; Product development; Semiconductor device manufacture; Semiconductor device packaging; Teamwork;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International

Conference_Location

Austin, TX

ISSN

1089-8190

Print_ISBN

0-7803-3929-0

Type

conf

DOI

10.1109/IEMT.1997.626867

Filename

626867