A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE

Author

Meliani, Chafik ; Rudolph, M. ; Kurpas, Paul ; Schmidt, L. ; Rheinfelder, C.N. ; Heinrich, W.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin

fYear

2007

fDate

3-8 June 2007

Firstpage

1087

Lastpage

1090

Abstract

A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competitive values for PAE, collector efficiency, and output power and the highest ones using GaAs-HBT technology. The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF amplifiers; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; GaAs; HBT class-E MMIC amplifier; PAE; amplifier gain; coplanar MMIC; frequency 2.4 GHz; in-depth circuit simulation; switch-mode operation; Circuit simulation; Circuit synthesis; Electrical resistance measurement; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Switching circuits; GaAs; HBT; PAE; class-E; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380282

Filename

4264016