Title :
Applications of GaN HEMTs and SiC MESFETs in High Efficiency Class-E Power Amplifier Design for WCDMA Applications
Author :
Lee, Yong-Sub ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
Abstract :
This paper presents high efficiency class-E power amplifiers using wide-bandgap devices such as GaN HEMT and SiC MESFET, which are designed at WCDMA band of 2.14 GHz. The output network using transmission lines is implemented to suppress harmonics and minimize losses. Measured results of the class-E power amplifier using wide-bandgap devices for a single tone have been compared to that of the class-E Si LDMOS power amplifier. For GaN HEMT and SiC MESFET cases, the power-added efficiency (PAE) of 70% with a gain of 13.0 dB and 72.3% with a gain of 10.3 dB are achieved at an output power of 43.0 dBm and 40.3 dBm, respectively, through significant reduction of harmonic power levels.
Keywords :
MOS integrated circuits; Schottky gate field effect transistors; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; GaN; HEMT; MESFET; PAE; Schottky gate field effect transistors; SiC; WCDMA; class-E power amplifier; frequency 2.14 GHz; gain 10.3 dB; gain 13.0 dB; harmonics suppression; high electron mobility transistors; power-added efficiency; Broadband amplifiers; Gain; Gallium nitride; HEMTs; High power amplifiers; MESFETs; MODFETs; Multiaccess communication; Power amplifiers; Silicon carbide; Class-E power amplifier; GaN HEMT; Si LDMOS; SiC MESFET; power added efficiency;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380285
