DocumentCode
2970262
Title
Basic BEOL parameters from isothermal wafer level electromigration testing
Author
Sullivan, Tim D. ; Lee, Tom ; Tibel, Deborah
Author_Institution
IBM Microelectron., Essex Junction, VT, USA
fYear
2000
fDate
2000
Firstpage
80
Lastpage
84
Abstract
Use of the isothermal electromigration wafer level test method necessarily establishes a unique relationship between the line initial resistance and the magnitude of the initial current selected for testing. The relationship, coupled with line resistance provides a powerful diagnostic tool for evaluation of electromigration failure data
Keywords
electromigration; failure analysis; life testing; metallisation; BEOL parameters; failure distribution; isothermal wafer-level electromigration testing; metal line resistance; Circuit testing; Electrical resistance measurement; Electromigration; Isothermal processes; Packaging; Resistance heating; Temperature control; Thermal conductivity; Thermal resistance; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-6392-2
Type
conf
DOI
10.1109/IRWS.2000.911905
Filename
911905
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