• DocumentCode
    2970554
  • Title

    LSF technique to analyze intrinsic TDDB failures of gate oxides

  • Author

    Katto, Hisao

  • Author_Institution
    Sci. Univ. of Tokyo, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    The exact least square fit (LSF) technique assuming quadratic dependence on EOX and 1/T is applied to analyze the published experimental TDDB data of MOS gate oxides. The EOX and 1/T dependence is found more complicated than the simple E model suggests. The linear EOX dependence of Eα and the linear 1/T dependence of Gamma is confirmed, and the disagreement with the original papers is discussed. The E model is preferred in the measured EOX and 1/T region, but, by extrapolation, the 1/E dependence may have merit at specific regions
  • Keywords
    MIS structures; failure analysis; least squares approximations; semiconductor device breakdown; 1/E model; E model; Gamma; MOS structure; TDDB failure; electric field dependence; gate oxide; least square fit; temperature dependence; Data mining; Educational institutions; Equations; Extrapolation; Failure analysis; Least squares methods; Mathematical model; Solid modeling; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2000 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-6392-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2000.911919
  • Filename
    911919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2970554