DocumentCode
2970640
Title
Reliability issues of ultra-thick gate oxides
Author
Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2000
fDate
2000
Firstpage
144
Lastpage
145
Abstract
In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results
Keywords
MIS devices; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; 50 to 120 nm; accelerated testing; degradation; dielectric breakdown; lifetime extrapolation; power MOS device; reliability; thin oxide model; ultra-thick gate oxide; Circuit testing; Dielectric breakdown; Electric breakdown; Extrapolation; Integrated circuit reliability; Life estimation; Life testing; Stress; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-6392-2
Type
conf
DOI
10.1109/IRWS.2000.911923
Filename
911923
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