Title :
Reliability issues of ultra-thick gate oxides
Author :
Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results
Keywords :
MIS devices; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; 50 to 120 nm; accelerated testing; degradation; dielectric breakdown; lifetime extrapolation; power MOS device; reliability; thin oxide model; ultra-thick gate oxide; Circuit testing; Dielectric breakdown; Electric breakdown; Extrapolation; Integrated circuit reliability; Life estimation; Life testing; Stress; Tunneling; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911923
