Title :
Standardizing EM structures for evaluation and qualification of aluminum alloys with barrier metals
Author :
Dion, Michael J.
Author_Institution :
Intersil Corp., Melbourne, FL, USA
Abstract :
Barrier metal interconnects are the most used metal systems in the semiconductor industry. Barrier metal electromigration (EM) performance and characteristics are significantly different than “old” aluminum alloy systems, and different EM structures are needed to properly evaluate the EM performance. A proposed EM structure for barrier metal reliability evaluation takes into account via interfaces, ion reservoirs, line width, and line length
Keywords :
aluminium alloys; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit reliability; aluminum alloy; barrier metal interconnect; electromigration; ion reservoir; metal line; reliability; semiconductor processing; via interface; Aluminum alloys; Copper; Electrical resistance measurement; Electromigration; Electronics industry; Metals industry; NIST; Qualifications; Testing; Tin;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911931
