Title :
A probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: models for deep-submicron transistors and optical interconnects
Author :
Haggag, A. ; McMahon, W. ; Hess, K. ; Cheng, K. ; Lee, J. ; Lyding, J.
Author_Institution :
Dept. of Phys., Illinois Univ., Urbana, IL, USA
Abstract :
This paper deviates from strictly empirical chip reliability approaches and uses instead a chip reliability methodology based on probabilistic-physics-of-failure (PPoF) principles. We derive the failure-time distribution of both deep-submicron transistors and optical interconnects owing to the presence of a common defect activation energy distribution. We show how short-time device degradation can be used to extract the tails of the semi-symmetric failure-time distribution (important for long-term reliability qualification). Applying novel reliability qualification rules based on this failure-time distribution, “latent failures” can then be avoided through design changes for reliability
Keywords :
MOSFET; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; optical interconnections; chip reliability; deep-submicron MOS transistor; defect activation energy distribution; device degradation; failure time distribution; latent failure; optical interconnect; probabilistic physics-of-failure model; short-time testing; Bragg gratings; Hot carriers; Logic; MOSFETs; Optical interconnections; Physics; Probability distribution; Qualifications; Thermal degradation; Wavelength division multiplexing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911934