DocumentCode :
2971868
Title :
The behavior of silicon materials in various production processes
Author :
Bell, R.O. ; Prince, M. ; Wald, F.V. ; Schmidt, W. ; Rasch, K.D.
Author_Institution :
ASE Americas Inc., Billerica, MA, USA
Volume :
2
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
1531
Abstract :
The authors show in this paper the behavior of two different solar grades of silicon subjected to three different solar cell production processes. Two resistivities of CZ material and cast polycrystalline slices of Bayer “Baysix” silicon were used. They find that a standard sequence that does not include reduction of the front and back surface recombination velocities performs poorly with all materials. Reducing these contributions to recombination leads to cell efficiencies well over 15% for single crystal materials and to the mid 14% range for cast polycrystalline silicon when a high throughput, low cost production process is used. The high efficiency process produces CZ cells with efficiencies over 19% and polycrystalline cells over 16%
Keywords :
carrier lifetime; crystal growth from melt; electron-hole recombination; electronic engineering computing; elemental semiconductors; power engineering computing; semiconductor device models; semiconductor growth; silicon; software packages; solar cells; surface recombination; Czochralski material; PC-1D software; Si; back surface recombination; computer simulation; efficiency; front surface recombination; polycrystalline semiconductor; resistivities; solar cell production processes; surface recombination velocities; Conductivity; Costs; Crystalline materials; Histograms; Hydrogen; Passivation; Photovoltaic cells; Production; Silicon; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520505
Filename :
520505
Link To Document :
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