A Broadband 42-63-GHz Amplifier Using 0.13-μm CMOS Technology

Author

Wang, To-Po ; Wang, Huei

Author_Institution

Nat. Taiwan Univ, Taipei

fYear

2007

fDate

3-8 June 2007

Firstpage

1779

Lastpage

1782

Abstract

An amplifier using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide- semiconductor (CMOS) technology is presented in this paper. This four-stage cascode thin-film microstrip amplifier achieves the peak gains of 18.1 dB at 45 GHz and 17.8 dB at 60 GHz. The 3-dB frequency bandwidth ranges from 42 to 63 GHz and the minimum noise figure is 8.2 dB at 60 GHz. The amplifier demonstrates the widest bandwidth with competitive gain among recently published millimeter-wave (MMW) CMOS amplifiers.

Keywords

CMOS integrated circuits; MMIC amplifiers; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; mixed analogue-digital integrated circuits; wideband amplifiers; CMOS technology; broadband amplifiers; cascode thin-film microstrip amplifier; frequency 42 GHz to 63 GHz; gain 17.8 dB; gain 18.1 dB; millimeter-wave amplifiers; mixed signal integrated circuits; noise figure 8.2 dB; size 0.13 μm; Bandwidth; Broadband amplifiers; CMOS technology; Gain; Microstrip; RF signals; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Semiconductor thin films; CMOS; co-planar waveguides (CPW); low-noise amplifier (LNA); millimeter-wave (MMW); thin-film microstrip (TFMS);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0687-0

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380075

Filename

4264200