On Compact HBT RF Noise Modeling

Accurate RF noise modeling of heterojunction bipolar transistors requires a proper model for the correlation of the shot-noise sources based on the respective time constant. This is incompatible with the present large-signal models, which, therefore, rely on non-correlated shot-noise sources and are not capable of predicting the RF noise with sufficient accuracy. In this paper, we propose a new configuration of the shot-noise sources which approximates the correlation by taking advantage of the large-signal model´s equivalent circuit topology. The model is verified by measurements.