Title :
Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing
Author :
Huet, K. ; Boniface, C. ; Fisicaro, G. ; Desse, F. ; Variam, N. ; Erokhin, Y. ; La Magna, A. ; Privitera, V. ; Schuhmacher, M. ; Besaucele, H. ; Venturing, J.
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
A collection of slides from the author´s conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.
Keywords :
annealing; elemental semiconductors; ion implantation; silicon; Si; dopant activation; double implanted silicon; layer electrical properties; layer junctions properties; pulsed laser thermal annealing; single pulse deep melt activation; Implants; Laser theory; Laser transitions; Optical pulses; Permission; Power lasers; Semiconductor lasers; Silicon; Simulated annealing; Solid lasers;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
Electronic_ISBN :
1944-0251
DOI :
10.1109/RTP.2009.5373482
