Title :
Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs
Author :
Silvestre, S. ; Puigdollers, J. ; Boronat, A. ; Castaner, L.
Author_Institution :
Dept. D´´Eng. Electron., Micro & Nano Technol. Group, Barcelona
Abstract :
Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor thin films; semiconductor-metal boundaries; silicon; sputtering; substrates; titanium; GaAs-Ti; GaAs-Ti-Si; intermediate band photovoltaic materials; optical properties; sputtering; structural properties; substrates; thin films; Gallium arsenide; Mechanical systems; Sputtering;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800415
