Title :
Design of an Integrated 2x4 Decoder Based on the Quantum Well MODFET to Reduce the Scale of the IC
Author_Institution :
Electr. Eng. Dept., Shahid Chamran Univ., Ahvaz
Abstract :
The quantum well MODFET (QWMODFET) has two 2DEG layers. We paralleled these two thin layers by using diffused Au/Ge/Ni ohmic contacts. Two back and top controlling gate were used on both sides of the structure to control the switching property of 2DEG layers separately. In this case there are two transistors in the same position. An enhancement mode QWMODFET was used to design some basic gates such as NAND by only one QWMODFET. By using this method it will be possible to design and fabricate smaller integrated circuits in comparison with the other existing methods. Also the total delay time of a circuit will decrease. When the scale of an IC is decreased then the total quantity of a noise density will reduce in the output. The 2times4 decoder has been designed based on the QWMODFET to show the ability of the suggested model.
Keywords :
high electron mobility transistors; integrated circuit design; integrated circuit noise; logic gates; ohmic contacts; quantum well devices; 2DEG layer; Au-Ge-Ni; IC scale reduction; enhancement mode; integrated circuit fabrication; integrated decoder design; noise density; ohmic contact diffusion; quantum well MODFET; switching property; Decoding; Delay effects; Electron devices; Gold; HEMTs; Integrated circuit layout; Integrated circuit noise; MODFET circuits; MODFET integrated circuits; Ohmic contacts;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800436
