Title :
Simulation Methods for Ionizing Radiation Single Event Effects Evaluation
Author :
Fernández-Martinez, P. ; Mogollón, J.M. ; Hidalgo, S. ; Palomo, F.R. ; Flores, D. ; Aguirre, M.A.
Author_Institution :
Centro Nac. de Microelectron., Campus UAB, Barcelona
Abstract :
Single Event Effects (SEE) produced by highly energetic particle hits on sensitive circuit regions constitutes a main topic in reliability and device performance in space applications. Due to their high cost and limited availability, alternative methods to particle accelerator tests have been developed. In this sense, numerical simulations represent an excellent tool to predict device and circuit behaviour induced by particle hits. This paper deals with simulation techniques and their use in SEE study. Some different methods are shown and their possibilities to determine SEEs and their consequences on circuit behaviour are evaluated.
Keywords :
circuit simulation; integrated circuit design; integrated circuit reliability; integrated circuit testing; ion beam effects; radiation hardening (electronics); SEE study; energetic particle hit; integrated circuit behaviour evaluation; integrated circuit reliability; integrated circuit testing; integrated circuits design; ionizing radiation; numerical simulation; sensitive integrated circuit region; single event effects evaluation; space applications; Computational modeling; Discrete event simulation; Effective mass; Electron devices; Ionizing radiation; MOSFETs; Nanoscale devices; Quantum computing; Quantum mechanics; Tunneling;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800451
