Title :
Exact circuit power loss design method for high power density converters utilizing Si-IGBT/SiC-diode hybrid pairs
Author :
Takao, Kazuto ; Ohashi, Hiromichi
Author_Institution :
Corporative R&D Center, Toshiba Corp., Kawasaki
Abstract :
An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.
Keywords :
Schottky diodes; elemental semiconductors; insulated gate bipolar transistors; losses; p-i-n diodes; power bipolar transistors; power convertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; IGBT; PiN diode; Si; SiC; circuit power loss design method; high power density converter; shottky-barrier-diode; switching frequency; voltage 4.5 kV; voltage 5 kV; Analytical models; Choppers; Design methodology; Equivalent circuits; Insulated gate bipolar transistors; Semiconductor diodes; Switching circuits; Switching frequency; Switching loss; Voltage; Device modeling; High Power Density Systems; IGBT; SiC-devices;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635244
