High Current and Low Turn-On Voltage InAlAs/InGaAsSb/InGaAs Heterojunction Bipolar Transistor

Author

Chen, Shu-Han ; Wang, Sheng-Yu ; Teng, Kuo-Hung ; Chyi, Jen-Inn

Author_Institution

Nat. Central Univ., Jhongli

fYear

2007

fDate

14-18 May 2007

Firstpage

141

Lastpage

144

Abstract

This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In_0.52Al_0.48As/In_xGa_1-xAs_1-ySb_y HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower V_CE.offset voltage and a greater junction ideality factor than conventional In_0.52Al_0.48As/In_0.53Ga_0.47As single HBT structures. The quaternary In_xGa_1-xAs_1-ySb_y base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

Keywords

gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; molecular beam epitaxial growth; DC characteristics; HBT; InAlAs-InGaAsSb-InGaAs; heterojunction bipolar transistor; low power application; molecular beam epitaxy; quaternary InGaAsSb base; turn-on voltage; Current density; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381143

Filename

4265900