Title :
Electron Nobilities And High-field Drift Velocities In Strained Silicon On Silicon-germanium Substrates
Author :
Vogelsang, Th. ; Hofmann, K.R.
Author_Institution :
Siemens AG
Keywords :
Acoustic scattering; Electron mobility; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFETs; Monte Carlo methods; Optical scattering; Phonons; Silicon germanium;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671857
