DC Characteristics of GaAsSb/InGaAs Type-II Heterojunction Bipolar Transistor

Author

Wang, Sheng-Yu ; Chen, Shu-Han ; Teng, Kuo-Hung ; Chyi, Jen-Inn

Author_Institution

Nat. Central Univ., Taoyuan

fYear

2007

fDate

14-18 May 2007

Firstpage

145

Lastpage

146

Abstract

InGaAs/InP single heterojunction bipolar transistor (SHBT) is the fastest HBT owing to its high current density and high electron saturation velocity. This work proposes a new structure with a GaAsSb/InGaAs B-C junction to improve upon the conventional SHBT. GaAsSb base material is used to maximize the conduction and valence band discontinuity in the lattice match material system.

Keywords

III-V semiconductors; conduction bands; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; valence bands; DC characteristics; GaAsSb-InGaAs; HBT; conduction band discontinuity; current density; electron saturation velocity; lattice match material system; type-II single heterojunction bipolar transistor; valence band discontinuity; Cities and towns; Conducting materials; Conference proceedings; Current density; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381144

Filename

4265901